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A Novel Alkylated Indacenodithieno[3,2‐b]thiophene‐Based Polymer for High‐Performance Field‐Effect Transistors
Author(s) -
Zhang Weimin,
Han Yang,
Zhu Xiuxiu,
Fei Zhuping,
Feng Yu,
Treat Neil D.,
Faber Hendrik,
Stingelin Natalie,
McCulloch Iain,
Anthopoulos Thomas D.,
Heeney Martin
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504092
Subject(s) - materials science , thiophene , thiocyanate , copolymer , electrode , monomer , alkyl , transistor , electron mobility , polymer , field effect transistor , copper , semiconductor , alkylation , polymer chemistry , optoelectronics , inorganic chemistry , organic chemistry , chemistry , voltage , catalysis , electrical engineering , composite material , metallurgy , engineering
A novel rigid donor monomer , indacenodithieno[3,2‐b]thiophene ( IDTT ), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p‐type semiconductor, affording a mobility of 6.6 cm 2 V −1 s −1 in top‐gated field‐effect transistors with pentafluorobenzenethiol‐modified Au electrodes. Electrode treatment with solution‐deposited copper(I) thiocyanate (CuSCN) has a beneficial hole‐injection/electron‐blocking effect, further enhancing the mobility to 8.7 cm 2 V −1 s −1 .