Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe 2 /MoS 2  Dichalcogenide Heterojunction | Zendy

Pezeshki Atiye | Zendy; Shokouh Seyed Hossein Hosseini | Zendy; Nazari Tavakol | Zendy; Oh Kyunghwan | Zendy; Im Seongil | Zendy

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Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe 2 /MoS 2 Dichalcogenide Heterojunction

Author(s) -

Pezeshki Atiye,

Shokouh Seyed Hossein Hosseini,

Nazari Tavakol,

Oh Kyunghwan,

Im Seongil

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201504090

Subject(s) - materials science , heterojunction , rectification , optoelectronics , photovoltaic system , diode , van der waals force , layer (electronics) , quantum efficiency , voltage , nanotechnology , electrical engineering , physics , quantum mechanics , molecule , engineering

Mo‐based van der Waals heterojunction p–n diodes with p‐type α‐MoTe 2 and n‐type MoS 2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10 3 , ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W –1 , and an external quantum efficiency of 85% under blue‐light illumination.

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