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Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition
Author(s) -
Elliott Simon D.,
Dey Gangotri,
Maimaiti Yasheng,
Ablat Hayrensa,
Filatova Ekaterina A.,
Fomengia Glen N.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504043
Subject(s) - atomic layer deposition , materials science , chemisorption , nanolithography , nanotechnology , atomic layer epitaxy , deposition (geology) , limiting , layer (electronics) , metal , copper , chemical engineering , catalysis , fabrication , chemistry , metallurgy , organic chemistry , mechanical engineering , medicine , paleontology , alternative medicine , pathology , sediment , engineering , biology
Recent progress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technologically important materials such as alumina, silica, and copper metal. Self‐limiting chemisorption of precursors onto substrates is studied using density functional theory so as to determine reaction pathways and aid process development. The main challenges for the future of ALD modeling are outlined.