Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures | Zendy

Isa Fabio | Zendy; Salvalaglio Marco | Zendy; Dasilva Yadira Arroyo Rojas | Zendy; Meduňa Mojmír | Zendy; Barget Michael | Zendy; Jung Arik | Zendy; Kreiliger Thomas | Zendy; Isella Giovanni | Zendy; Erni Rolf | Zendy; Pezzoli Fabio | Zendy; Bonera Emiliano | Zendy; Niedermann Philippe | Zendy; Gröning Pierangelo | Zendy; Montalenti Francesco | Zendy; von Känel Hans | Zendy

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Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures

Author(s) -

Isa Fabio,

Salvalaglio Marco,

Dasilva Yadira Arroyo Rojas,

Meduňa Mojmír,

Barget Michael,

Jung Arik,

Kreiliger Thomas,

Isella Giovanni,

Erni Rolf,

Pezzoli Fabio,

Bonera Emiliano,

Niedermann Philippe,

Gröning Pierangelo,

Montalenti Francesco,

von Känel Hans

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201504029

Subject(s) - materials science , heterojunction , dislocation , optoelectronics , silicon germanium , substrate (aquarium) , silicon , nanotechnology , condensed matter physics , composite material , oceanography , geology , physics

Defect‐free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001).

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