Premium
Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures
Author(s) -
Isa Fabio,
Salvalaglio Marco,
Dasilva Yadira Arroyo Rojas,
Meduňa Mojmír,
Barget Michael,
Jung Arik,
Kreiliger Thomas,
Isella Giovanni,
Erni Rolf,
Pezzoli Fabio,
Bonera Emiliano,
Niedermann Philippe,
Gröning Pierangelo,
Montalenti Francesco,
von Känel Hans
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504029
Subject(s) - materials science , heterojunction , dislocation , optoelectronics , silicon germanium , substrate (aquarium) , silicon , nanotechnology , condensed matter physics , composite material , oceanography , geology , physics
Defect‐free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001).