Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect | Zendy

Luo Zhaochu | Zendy; Xiong Chengyue | Zendy; Zhang Xu | Zendy; Guo ZhenGang | Zendy; Cai Jianwang | Zendy; Zhang Xiaozhong | Zendy

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Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

Author(s) -

Luo Zhaochu,

Xiong Chengyue,

Zhang Xu,

Guo ZhenGang,

Cai Jianwang,

Zhang Xiaozhong

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201504023

Subject(s) - magnetoresistance , condensed matter physics , materials science , hall effect , magnetic field , coupling (piping) , nonlinear system , field (mathematics) , physics , quantum mechanics , metallurgy , mathematics , pure mathematics

The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode‐assisted mechanism. An extremely large MR (>10 4 %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations.

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