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Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect
Author(s) -
Luo Zhaochu,
Xiong Chengyue,
Zhang Xu,
Guo ZhenGang,
Cai Jianwang,
Zhang Xiaozhong
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504023
Subject(s) - magnetoresistance , condensed matter physics , materials science , hall effect , magnetic field , coupling (piping) , nonlinear system , field (mathematics) , physics , quantum mechanics , metallurgy , mathematics , pure mathematics
The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode‐assisted mechanism. An extremely large MR (>10 4 %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations.