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Ultrasensitive Phototransistors Based on Few‐Layered HfS 2
Author(s) -
Xu Kai,
Wang Zhenxing,
Wang Feng,
Huang Yun,
Wang Fengmei,
Yin Lei,
Jiang Chao,
He Jun
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503864
Subject(s) - materials science , photodiode , ranging , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , chromatography , computer science , telecommunications
An ultrathin HfS 2 ‐based ultrasensitive phototransistor is systematically studied. Au‐contacted HfS 2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10 7 , ultrahigh photoresponsivity over 890 A W −1 , and photogain over 2300. Moreover, the response time is strongly dependent on the back‐gate voltage and shows a reverse trend for Au and Cr metals.