Ultrasensitive Phototransistors Based on Few‐Layered HfS 2 | Zendy

Xu Kai | Zendy; Wang Zhenxing | Zendy; Wang Feng | Zendy; Huang Yun | Zendy; Wang Fengmei | Zendy; Yin Lei | Zendy; Jiang Chao | Zendy; He Jun | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Ultrasensitive Phototransistors Based on Few‐Layered HfS 2

Author(s) -

Xu Kai,

Wang Zhenxing,

Wang Feng,

Huang Yun,

Wang Fengmei,

Yin Lei,

Jiang Chao,

He Jun

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201503864

Subject(s) - materials science , photodiode , ranging , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , chromatography , computer science , telecommunications

An ultrathin HfS 2 ‐based ultrasensitive phototransistor is systematically studied. Au‐contacted HfS 2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10 7 , ultrahigh photoresponsivity over 890 A W −1 , and photogain over 2300. Moreover, the response time is strongly dependent on the back‐gate voltage and shows a reverse trend for Au and Cr metals.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research