Scanning Kelvin Probe Microscopy Investigation of the Role of Minority Carriers on the Switching Characteristics of Organic Field‐Effect Transistors | Zendy

Hu Yuanyuan | Zendy; Pecunia Vincenzo | Zendy; Jiang Lang | Zendy; Di ChongAn | Zendy; Gao Xike | Zendy; Sirringhaus Henning | Zendy

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Scanning Kelvin Probe Microscopy Investigation of the Role of Minority Carriers on the Switching Characteristics of Organic Field‐Effect Transistors

Author(s) -

Hu Yuanyuan,

Pecunia Vincenzo,

Jiang Lang,

Di ChongAn,

Gao Xike,

Sirringhaus Henning

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201503812

Subject(s) - kelvin probe force microscope , materials science , field effect transistor , microscopy , scanning probe microscopy , nanotechnology , optoelectronics , atomic force microscopy , transistor , field (mathematics) , optics , electrical engineering , physics , mathematics , voltage , pure mathematics , engineering

A method based on scanning Kelvin probe microscopy is developed to probe the effects of minority carriers on the switching characteristics of organic field‐effect transistors. The mobility of the minority carriers is extracted and the role they play in screening of the gate potential in the OFF state and in recombination of trapped majority carriers trapped after an ON state is understood.

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