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Scanning Kelvin Probe Microscopy Investigation of the Role of Minority Carriers on the Switching Characteristics of Organic Field‐Effect Transistors
Author(s) -
Hu Yuanyuan,
Pecunia Vincenzo,
Jiang Lang,
Di ChongAn,
Gao Xike,
Sirringhaus Henning
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503812
Subject(s) - kelvin probe force microscope , materials science , transistor , microscopy , optoelectronics , scanning probe microscopy , field effect transistor , nanotechnology , field (mathematics) , atomic force microscopy , chemical physics , optics , chemistry , physics , voltage , mathematics , quantum mechanics , pure mathematics
A method based on scanning Kelvin probe microscopy is developed to probe the effects of minority carriers on the switching characteristics of organic field‐effect transistors. The mobility of the minority carriers is extracted and the role they play in screening of the gate potential in the OFF state and in recombination of trapped majority carriers trapped after an ON state is understood.