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Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design
Author(s) -
Park HyungYoul,
Jung WooShik,
Kang DongHo,
Jeon Jaeho,
Yoo Gwangwe,
Park Yongkook,
Lee Jinhee,
Jang Yun Hee,
Lee Jaeho,
Park Seongjun,
Yu HyunYong,
Shin Byungha,
Lee Sungjoo,
Park JinHong
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503715
Subject(s) - graphene , materials science , doping , contact resistance , photodetector , enhanced data rates for gsm evolution , perovskite (structure) , optoelectronics , nanotechnology , chemical engineering , layer (electronics) , computer science , telecommunications , engineering
The effects of graphene n‐doping on a metal–graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene–perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W −1 in photoresponsivity and 3.3 × 10 4 → 5.4 × 10 4 Jones in detectivity).