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Oxidative‐Etching‐Assisted Synthesis of Centimeter‐Sized Single‐Crystalline Graphene
Author(s) -
Guo Wei,
Jing Feng,
Xiao Jian,
Zhou Ce,
Lin Yuanwei,
Wang Shuai
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503705
Subject(s) - graphene , materials science , nucleation , chemical vapor deposition , etching (microfabrication) , nanotechnology , oxidative phosphorylation , chemical engineering , centimeter , layer (electronics) , organic chemistry , chemistry , engineering , medicine , biochemistry , surgery
Centimeter‐sized single‐crystalline graphene is obtained by an oxidative‐etching‐assisted chemical vapor deposition (CVD) method. Gaseous oxidants are found to be highly responsible for graphene etching. By diminishing the uncertain amount of H 2 O vapor in commercial H 2 and precisely introducing additional O 2 , the graphene nucleation density can be well controlled.