Trilayer Tunnel Selectors for Memristor Memory Cells | Zendy

Choi Byung Joon | Zendy; Zhang Jiaming | Zendy; Norris Kate | Zendy; Gibson Gary | Zendy; Kim Kyung Min | Zendy; Jackson Warren | Zendy; Zhang MinXian Max | Zendy; Li Zhiyong | Zendy; Yang J. Joshua | Zendy; Williams R. Stanley | Zendy

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Trilayer Tunnel Selectors for Memristor Memory Cells

Author(s) -

Choi Byung Joon,

Zhang Jiaming,

Norris Kate,

Gibson Gary,

Kim Kyung Min,

Jackson Warren,

Zhang MinXian Max,

Li Zhiyong,

Yang J. Joshua,

Williams R. Stanley

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201503604

Subject(s) - memristor , materials science , non volatile memory , optoelectronics , voltage , scalability , memory cell , diode , resistive random access memory , electrical engineering , nanotechnology , transistor , computer science , engineering , database

An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN 1+x /Ta 2 O 5 /TaN 1+x crested barrier selector yields a large nonlinearity (>10 4 ), high endurance (>10 8 ), low variability, and low temperature dependence.

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