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Trilayer Tunnel Selectors for Memristor Memory Cells
Author(s) -
Choi Byung Joon,
Zhang Jiaming,
Norris Kate,
Gibson Gary,
Kim Kyung Min,
Jackson Warren,
Zhang MinXian Max,
Li Zhiyong,
Yang J. Joshua,
Williams R. Stanley
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503604
Subject(s) - memristor , materials science , non volatile memory , optoelectronics , voltage , scalability , memory cell , diode , resistive random access memory , electrical engineering , nanotechnology , transistor , computer science , engineering , database
An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN 1+x /Ta 2 O 5 /TaN 1+x crested barrier selector yields a large nonlinearity (>10 4 ), high endurance (>10 8 ), low variability, and low temperature dependence.