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Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic‐Functionalized Suspended Gate Electrodes
Author(s) -
Zang Yaping,
Zhang Fengjiao,
Huang Dazhen,
Di Chongan,
Zhu Daoben
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503542
Subject(s) - flexibility (engineering) , materials science , organic field effect transistor , transistor , sensitivity (control systems) , nanotechnology , optoelectronics , electrode , electrical engineering , field effect transistor , computer science , electronic engineering , voltage , physics , engineering , quantum mechanics , statistics , mathematics
Utilizing a magnetic‐functionalized suspended gate with combined features of outstanding conductivity, flexibility, and magnetic properties, flexible magnetic sensor based on an organic field‐effect transistor (OFET), with a high sensitivity of 115.2% mT −1 is demonstrated. Gate engineering enables the sensing devices to possess promising applications for flexible touchless switches and spatiallyresolved magnetic‐imaging elements.