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Ambipolar Organic Tri‐Gate Transistor for Low‐Power Complementary Electronics
Author(s) -
Torricelli Fabrizio,
Ghittorelli Matteo,
Smits Edsger C. P.,
Roelofs Christian W. S.,
Janssen René A. J.,
Gelinck Gerwin H.,
KovácsVajna Zsolt M.,
Cantatore Eugenio
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503414
Subject(s) - ambipolar diffusion , transistor , materials science , electronics , power (physics) , optoelectronics , nanotechnology , electrical engineering , computer science , physics , engineering , voltage , electron , quantum mechanics
Ambipolar transistors typically suffer from large off‐current inherently due to ambipolar conduction. Using a tri‐gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10 5 are obtained. This enables easy integration into low‐power complementary logic and volatile electronic memories.