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Extreme Sensitivity of Room‐Temperature Photoelectric Effect for Terahertz Detection
Author(s) -
Huang Zhiming,
Zhou Wei,
Tong Jinchao,
Huang Jingguo,
Ouyang Cheng,
Qu Yue,
Wu Jing,
Gao Yanqing,
Chu Junhao
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503350
Subject(s) - materials science , terahertz radiation , sensitivity (control systems) , photoelectric effect , optoelectronics , nanotechnology , electronic engineering , engineering
Extreme sensitivity of room‐temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal–semiconductor–metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.