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All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS 2 /Graphene Heterostructures
Author(s) -
Shi Jianping,
Liu Mengxi,
Wen Jinxiu,
Ren Xibiao,
Zhou Xiebo,
Ji Qingqing,
Ma Donglin,
Zhang Yu,
Jin Chuanhong,
Chen Huanjun,
Deng Shaozhi,
Xu Ningsheng,
Liu Zhongfan,
Zhang Yanfeng
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503342
Subject(s) - chemical vapor deposition , heterojunction , materials science , graphene , monolayer , photoluminescence , exciton , doping , band gap , nanotechnology , spectroscopy , characterization (materials science) , optoelectronics , condensed matter physics , physics , quantum mechanics
A facile all‐chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS 2 in the same growth process, thus allowing the direct construction of MoS 2 /Gr vertical heterostructures on Au foils. A weak n‐doping effect and an intrinsic bandgap of MoS 2 are obtained from MoS 2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.