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In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device
Author(s) -
Tian He,
Zhao Haiming,
Wang XueFeng,
Xie QianYi,
Chen HongYu,
Mohammad Mohammad Ali,
Li Cheng,
Mi WenTian,
Bie Zhi,
Yeh ChaoHui,
Yang Yi,
Wong H.S. Philip,
Chiu PoWen,
Ren TianLing
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503125
Subject(s) - resistive random access memory , materials science , electrode , optoelectronics , graphene , bilayer , bilayer graphene , gating , voltage , window (computing) , resistive touchscreen , nanotechnology , electrical engineering , membrane , physiology , chemistry , engineering , biology , computer science , genetics , operating system
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from −10 to +35 V. The gate‐controlled bilayer graphene‐electrode RRAM can function as 1D1R and potentially increase the RRAM density.