Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS 2  by Dielectric and Carrier Screening | Zendy

Yu Zhihao | Zendy; Ong ZhunYong | Zendy; Pan Yiming | Zendy; Cui Yang | Zendy; Xin Run | Zendy; Shi Yi | Zendy; Wang Baigeng | Zendy; Wu Yun | Zendy; Chen Tangsheng | Zendy; Zhang YongWei | Zendy; Zhang Gang | Zendy; Wang Xinran | Zendy

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Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS 2 by Dielectric and Carrier Screening

Author(s) -

Yu Zhihao,

Ong ZhunYong,

Pan Yiming,

Cui Yang,

Xin Run,

Shi Yi,

Wang Baigeng,

Wu Yun,

Chen Tangsheng,

Zhang YongWei,

Zhang Gang,

Wang Xinran

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201503033

Subject(s) - monolayer , phonon , realization (probability) , materials science , dielectric , substrate (aquarium) , transistor , optoelectronics , impurity , charge carrier , electron mobility , coulomb , condensed matter physics , nanotechnology , physics , quantum mechanics , voltage , geology , statistics , mathematics , oceanography , electron

By combining a high‐ κ dielectric substrate and a high density of charge carriers , Coulomb impurities in MoS 2 can be effectively screened, leading to an unprecedented room‐temperature mobility of ≈150 cm 2 V −1 s −1 and room‐temperature phonon‐limited transport in a monolayer MoS 2 transistor for the first time.

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