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Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS 2 by Dielectric and Carrier Screening
Author(s) -
Yu Zhihao,
Ong ZhunYong,
Pan Yiming,
Cui Yang,
Xin Run,
Shi Yi,
Wang Baigeng,
Wu Yun,
Chen Tangsheng,
Zhang YongWei,
Zhang Gang,
Wang Xinran
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201503033
Subject(s) - monolayer , materials science , phonon , dielectric , realization (probability) , substrate (aquarium) , transistor , optoelectronics , impurity , electron mobility , charge carrier , coulomb , condensed matter physics , nanotechnology , physics , quantum mechanics , voltage , oceanography , geology , electron , statistics , mathematics
By combining a high‐ κ dielectric substrate and a high density of charge carriers , Coulomb impurities in MoS 2 can be effectively screened, leading to an unprecedented room‐temperature mobility of ≈150 cm 2 V −1 s −1 and room‐temperature phonon‐limited transport in a monolayer MoS 2 transistor for the first time.