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Tuning the Tunneling Rate and Dielectric Response of SAM‐Based Junctions via a Single Polarizable Atom
Author(s) -
Wang Dandan,
Fracasso Davide,
Nurbawono Argo,
Annadata Harshini V.,
Sangeeth C. S. Suchand,
Yuan Li,
Nijhuis Christian A.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502968
Subject(s) - polarizability , dielectric , quantum tunnelling , materials science , monolayer , atom (system on chip) , condensed matter physics , dielectric response , chemical physics , nanotechnology , optoelectronics , molecule , physics , quantum mechanics , computer science , embedded system
The dielectric response and electrical properties of junctions based on self‐assembled monolayers (SAMs) of the form S(CH 2 ) 11 X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000‐fold increase in the tunneling rate and a four‐fold increase of the dielectric constant ( ε r ) with increasing polarizability of X are found.
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