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Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x Cl x Perovskite for Resistive Random Access Memory Devices
Author(s) -
Yoo Eun Ji,
Lyu Miaoqiang,
Yun JungHo,
Kang Chi Jung,
Choi Young Jin,
Wang Lianzhou
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502889
Subject(s) - resistive touchscreen , materials science , perovskite (structure) , resistive random access memory , optoelectronics , nanotechnology , chemical engineering , electrode , electrical engineering , chemistry , engineering
The CH 3 NH 3 PbI 3− x Cl x organic–inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH 3 NH 3 PbI 3− x Cl x /FTO structure is fabricated by a low‐temperature, solution‐processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.