Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x  Cl  x   Perovskite for Resistive Random Access Memory Devices | Zendy

Yoo Eun Ji | Zendy; Lyu Miaoqiang | Zendy; Yun JungHo | Zendy; Kang Chi Jung | Zendy; Choi Young Jin | Zendy; Wang Lianzhou | Zendy

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Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x Cl x Perovskite for Resistive Random Access Memory Devices

Author(s) -

Yoo Eun Ji,

Lyu Miaoqiang,

Yun JungHo,

Kang Chi Jung,

Choi Young Jin,

Wang Lianzhou

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201502889

Subject(s) - resistive touchscreen , materials science , perovskite (structure) , resistive random access memory , optoelectronics , nanotechnology , chemical engineering , electrode , electrical engineering , chemistry , engineering

The CH 3 NH 3 PbI 3− x Cl x organic–inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH 3 NH 3 PbI 3− x Cl x /FTO structure is fabricated by a low‐temperature, solution‐processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.

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