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Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament
Author(s) -
Chen JuiYuan,
Huang ChunWei,
Chiu ChungHua,
Huang YuTing,
Wu WenWei
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502758
Subject(s) - protein filament , materials science , anode , oxygen , service (business) , boundary (topology) , chemical physics , nanotechnology , computer science , business , electrode , physics , chemistry , composite material , mathematical analysis , mathematics , quantum mechanics , marketing
The filament in a Au/Ta 2 O 5 /Au system is analyzed and determined to be a nanoscaled TaO 2− x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen‐vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.