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Origin of Noise in Layered MoTe 2 Transistors and its Possible Use for Environmental Sensors
Author(s) -
Lin YenFu,
Xu Yong,
Lin CheYi,
Suen YuenWuu,
Yamamoto Mahito,
Nakaharai Shu,
Ueno Keiji,
Tsukagoshi Kazuhito
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502677
Subject(s) - transistor , noise (video) , materials science , mechanism (biology) , thin film transistor , optoelectronics , service (business) , molybdenum , computer science , nanotechnology , electrical engineering , voltage , physics , artificial intelligence , engineering , quantum mechanics , image (mathematics) , metallurgy , economy , layer (electronics) , economics
Low‐frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H‐type α‐molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition‐metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.