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Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO x Based Memristive Devices
Author(s) -
Lübben Michael,
Karakolis Panagiotis,
IoannouSougleridis Vassilios,
Normand Pascal,
Dimitrakis Panagiotis,
Valov Ilia
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502574
Subject(s) - materials science , graphene , electrode , electrochemistry , resistive random access memory , nanotechnology , optoelectronics , bridging (networking) , electrolyte , computer network , chemistry , computer science
By modification of the electrode–solid‐electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta 2 O 5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta‐cation mobility in TaO x . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.