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Flexography‐Printed In 2 O 3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate
Author(s) -
Leppäniemi Jaakko,
Huttunen OlliHeikki,
Majumdar Himadri,
Alastalo Ari
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502569
Subject(s) - materials science , thin film transistor , optoelectronics , semiconductor , amorphous solid , thin film , oxide thin film transistor , electron mobility , doping , amorphous silicon , substrate (aquarium) , nanotechnology , silicon , layer (electronics) , crystalline silicon , crystallography , chemistry , oceanography , geology
Industrially scalable and roll‐to‐roll‐compatible fabrication methods are utilized to fabricate high‐mobility (≈8 cm 2 V −1 s −1 ) nanocrystalline In 2 O 3 thin‐film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In 2 O 3 semiconductor layers from precursor‐solution is performed on a Al 2 O 3 gate dielectric obtained via atomic layer deposition. A low‐temperature post‐contact‐annealing step allows control of the TFT device turn‐on voltage to ≈0 V for enhancement‐mode operation.
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