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Hybrid Area‐Emitting Transistors: Solution Processable and with High Aperture Ratios
Author(s) -
Muhieddine Khalid,
Ullah Mujeeb,
Maasoumi Fatemeh,
Burn Paul. L.,
Namdas Ebinazar B.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502554
Subject(s) - materials science , transistor , optoelectronics , nanotechnology , electrical engineering , engineering , voltage
Area emission is realized in all‐solution‐processed hybrid light‐emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.