Premium
Lateral Built‐In Potential of Monolayer MoS 2 –WS 2 In‐Plane Heterostructures by a Shortcut Growth Strategy
Author(s) -
Chen Kun,
Wan Xi,
Xie Weiguang,
Wen Jinxiu,
Kang Zhiwen,
Zeng Xiaoliang,
Chen Huanjun,
Xu Jianbin
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502375
Subject(s) - heterojunction , materials science , monolayer , kelvin probe force microscope , nanotechnology , optoelectronics , electric field , atomic force microscopy , plane (geometry) , microscopy , optics , geometry , physics , mathematics , quantum mechanics
Lateral WS 2 –MoS 2 heterostructures are synthesized by a shortcut one‐step growth recipe with low‐cost and soluble salts. The 2D spatial distributions of the built‐in potential and the related electric field of the lateral WS 2 –MoS 2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.