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Characterizing the Switching Thresholds of Magnetophoretic Transistors
Author(s) -
AbediniNassab Roozbeh,
Joh Daniel Y.,
Van Heest Melissa A.,
Yi John S.,
Baker Cody,
Taherifard Zohreh,
Margolis David M.,
Garcia J. Victor,
Chilkoti Ashutosh,
Murdoch David M.,
Yellen Benjamin B.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502352
Subject(s) - transistor , sorting , materials science , computer science , nanotechnology , optoelectronics , electrical engineering , voltage , engineering , programming language
The switching thresholds of magnetophoretic transistors for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20–30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in specified array sites.