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Ultrasensitive Thin‐Film‐Based Al x Ga 1− x N Piezotronic Strain Sensors via Alloying‐Enhanced Piezoelectric Potential
Author(s) -
Wang ChaoHung,
Lai KunYu,
Li YiChang,
Chen YenChih,
Liu ChuanPu
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502314
Subject(s) - materials science , piezoelectricity , ternary operation , strain (injury) , intercalation (chemistry) , thin film , sensitivity (control systems) , optoelectronics , ternary compound , analytical chemistry (journal) , nanotechnology , composite material , inorganic chemistry , electronic engineering , chromatography , medicine , chemistry , computer science , programming language , engineering
Al x Ga 1− x N thin‐film‐based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Al x Ga 1− x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.
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