Large‐Scale Precise Printing of Ultrathin Sol–Gel Oxide Dielectrics for Directly Patterned Solution‐Processed Metal Oxide Transistor Arrays | Zendy

Lee WonJune | Zendy; Park WonTae | Zendy; Park Sungjun | Zendy; Sung Sujin | Zendy; Noh YongYoung | Zendy; Yoon MyungHan | Zendy

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Large‐Scale Precise Printing of Ultrathin Sol–Gel Oxide Dielectrics for Directly Patterned Solution‐Processed Metal Oxide Transistor Arrays

Author(s) -

Lee WonJune,

Park WonTae,

Park Sungjun,

Sung Sujin,

Noh YongYoung,

Yoon MyungHan

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201502239

Subject(s) - materials science , oxide , thin film transistor , transistor , optoelectronics , indium , metal , dielectric , gate dielectric , equivalent oxide thickness , gate oxide , gallium , sol gel , nanotechnology , layer (electronics) , voltage , electrical engineering , metallurgy , engineering

Ultrathin and dense metal oxide gate dielectric layers are reported by a simple printing of AlO x and HfO x sol–gel precursors. Large‐area printed indium gallium zinc oxide (IGZO) thin‐film transistor arrays, which exhibit mobilities >5 cm 2 V −1 s −1 and gate leakage current of 10 −9 A cm −2 at a very low operation voltage of 2 V, are demonstrated by continuous simple bar‐coated processes.

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