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Room Temperature Oxide Deposition Approach to Fully Transparent, All‐Oxide Thin‐Film Transistors
Author(s) -
Rembert Thomas,
Battaglia Corsin,
Anders André,
Javey Ali
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502159
Subject(s) - materials science , thin film transistor , fabrication , optoelectronics , substrate (aquarium) , foil method , thin film , oxide , polyimide , deposition (geology) , transistor , nanotechnology , voltage , layer (electronics) , composite material , electrical engineering , metallurgy , medicine , paleontology , oceanography , alternative medicine , engineering , pathology , sediment , geology , biology
A room temperature cathodic arc deposition technique is used to produce high‐mobility ZnO thin films for low voltage thin‐film transistors (TFTs) and digital logic inverters. All‐oxide, fully transparent devices are fabricated on alkali‐free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low‐temperature fabrication of all‐oxide TFTs on virtually any substrate.