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High‐Performance, Mechanically Flexible, and Vertically Integrated 3D Carbon Nanotube and InGaZnO Complementary Circuits with a Temperature Sensor
Author(s) -
Honda Wataru,
Harada Shingo,
Ishida Shohei,
Arie Takayuki,
Akita Seiji,
Takei Kuniharu
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201502116
Subject(s) - inverter , cmos , materials science , flexibility (engineering) , electronic circuit , layer (electronics) , nanotechnology , computer science , optoelectronics , electrical engineering , engineering , statistics , mathematics , voltage
A vertically integrated inorganic‐based flexible complementary metal–oxide–semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm −1 is demonstrated using a layer‐by‐layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed.