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Large Enhancement of Carrier Transport in Solution‐Processed Field‐Effect Transistors by Fluorinated Dielectric Engineering
Author(s) -
Khim Dongyoon,
Xu Yong,
Baeg KangJun,
Kang Minji,
Park WonTae,
Lee SeungHoon,
Kim InBok,
Kim Juhwan,
Kim DongYu,
Liu Chuan,
Noh YongYoung
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501967
Subject(s) - materials science , dielectric , semiconductor , transistor , field effect transistor , optoelectronics , range (aeronautics) , engineering physics , nanotechnology , electrical engineering , voltage , composite material , engineering
The universal role of high‐ k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.