Large Enhancement of Carrier Transport in Solution‐Processed Field‐Effect Transistors by Fluorinated Dielectric Engineering | Zendy

Khim Dongyoon | Zendy; Xu Yong | Zendy; Baeg KangJun | Zendy; Kang Minji | Zendy; Park WonTae | Zendy; Lee SeungHoon | Zendy; Kim InBok | Zendy; Kim Juhwan | Zendy; Kim DongYu | Zendy; Liu Chuan | Zendy; Noh YongYoung | Zendy

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Large Enhancement of Carrier Transport in Solution‐Processed Field‐Effect Transistors by Fluorinated Dielectric Engineering

Author(s) -

Khim Dongyoon,

Xu Yong,

Baeg KangJun,

Kang Minji,

Park WonTae,

Lee SeungHoon,

Kim InBok,

Kim Juhwan,

Kim DongYu,

Liu Chuan,

Noh YongYoung

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201501967

Subject(s) - materials science , dielectric , semiconductor , transistor , field effect transistor , optoelectronics , range (aeronautics) , engineering physics , nanotechnology , electrical engineering , voltage , composite material , engineering

The universal role of high‐ k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.

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