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Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS 2 )
Author(s) -
Keyshar Kunttal,
Gong Yongji,
Ye Gonglan,
Brunetto Gustavo,
Zhou Wu,
Cole Daniel P.,
Hackenberg Ken,
He Yongmin,
Machado Leonardo,
Kabbani Mohamad,
Hart Amelia H. C.,
Li Bo,
Galvao Douglas S.,
George Antony,
Vajtai Robert,
Tiwary Chandra Sekhar,
Ajayan Pulickel M.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501795
Subject(s) - monolayer , materials science , chemical vapor deposition , rhenium , characterization (materials science) , deposition (geology) , semiconductor , field effect transistor , analytical chemistry (journal) , spectroscopy , chemical engineering , nanotechnology , transistor , optoelectronics , organic chemistry , metallurgy , chemistry , paleontology , physics , quantum mechanics , voltage , sediment , engineering , biology
The direct synthesis of monolayer and multilayer ReS 2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field‐effect transistor characteristics are evaluated, which highlight the potential in being used as an n‐type semiconductor.