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Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
Author(s) -
Liu Bilu,
Köpf Marianne,
Abbas Ahmad N.,
Wang Xiaomu,
Guo Qiushi,
Jia Yichen,
Xia Fengnian,
Weihrich Richard,
Bachhuber Frederik,
Pielnhofer Florian,
Wang Han,
Dhall Rohan,
Cronin Stephen B.,
Ge Mingyuan,
Fang Xin,
Nilges Tom,
Zhou Chongwu
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501758
Subject(s) - materials science , arsenic , infrared , semiconductor , anisotropy , black phosphorus , optoelectronics , absorption (acoustics) , wavelength , infrared spectroscopy , phosphorus , optics , organic chemistry , chemistry , metallurgy , composite material , physics
New layered anisotropic infrared semiconductors, black arsenic–phosphorus (b‐AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b‐AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long‐wavelength infrared regime and cannot be readily reached by other layered materials.