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Molecular Beam Epitaxy‐Grown SnSe in the Rock‐Salt Structure: An Artificial Topological Crystalline Insulator Material
Author(s) -
Wang Zhenyu,
Wang Jianfeng,
Zang Yunyi,
Zhang Qinghua,
Shi JinAn,
Jiang Tian,
Gong Yan,
Song CanLi,
Ji ShuaiHua,
Wang LiLi,
Gu Lin,
He Ke,
Duan Wenhui,
Ma Xucun,
Chen Xi,
Xue QiKun
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501676
Subject(s) - molecular beam epitaxy , topological insulator , epitaxy , materials science , photoemission spectroscopy , insulator (electricity) , multiferroics , substrate (aquarium) , topology (electrical circuits) , nanotechnology , crystallography , optoelectronics , condensed matter physics , ferroelectricity , chemical engineering , x ray photoelectron spectroscopy , chemistry , physics , geology , oceanography , mathematics , layer (electronics) , combinatorics , dielectric , engineering
A new topological crystalline insulator material , SnSe in the rock‐salt structure, is obtained using molecular beam epitaxy. The thermodynamically unstable rock‐salt SnSe phase is stabilized in epitaxial films up to 20 nm by a Bi 2 Se 3 substrate. Dirac surface states are observed at both the Γ ¯ and the M ¯ points using angle‐resolved photoemission spectroscopy; this confirms the topological crystalline insulator phase of the films.