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Interfacing Solution‐Grown C 60 and (3‐Pyrrolinium)(CdCl 3 ) Single Crystals for High‐Mobility Transistor‐Based Memory Devices
Author(s) -
Wu Jiake,
Fan Congcheng,
Xue Guobiao,
Ye Tao,
Liu Shuang,
Lin Ruoqian,
Chen Hongzheng,
Xin Huolin L.,
Xiong RenGen,
Li Hanying
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501577
Subject(s) - materials science , ferroelectricity , interfacing , heterojunction , transistor , hysteresis , optoelectronics , non volatile memory , semiconductor , nanotechnology , condensed matter physics , dielectric , computer hardware , electrical engineering , computer science , voltage , physics , engineering
Aligned ferroelectric single crystals of (3‐pyrrolinium)(CdCl 3 ) can be prepared from solution on top of aligned semiconducting C 60 single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C 60 single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.