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High‐Mobility Sm‐Doped Bi 2 Se 3 Ferromagnetic Topological Insulators and Robust Exchange Coupling
Author(s) -
Chen Taishi,
Liu Wenqing,
Zheng Fubao,
Gao Ming,
Pan Xingchen,
van der Laan Gerrit,
Wang Xuefeng,
Zhang Qinfang,
Song Fengqi,
Wang Baigeng,
Wang Baolin,
Xu Yongbing,
Wang Guanghou,
Zhang Rong
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501254
Subject(s) - ferromagnetism , curie temperature , materials science , topological insulator , dopant , condensed matter physics , electron mobility , magnetic circular dichroism , coupling (piping) , exchange interaction , doping , curie , topology (electrical circuits) , physics , optoelectronics , metallurgy , quantum mechanics , mathematics , combinatorics , spectral line
High‐mobility (Sm x Bi 1‐ x ) 2 Se 3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X‐ray magnetic circular dichroism and first‐principles calculations. The carrier concentration is on the order of 10 19 cm −3 and the mobility can reach about 7200 cm 2 V −1 s −1 with pronounced Shubnikov–de Haas oscillations.