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Pt/Ta 2 O 5 /HfO 2− x /Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Author(s) -
Yoon Jung Ho,
Kim Kyung Min,
Song Seul Ji,
Seok Jun Yeong,
Yoon Kyung Jean,
Kwon Dae Eun,
Park Tae Hyung,
Kwon Young Jae,
Shao Xinglong,
Hwang Cheol Seong
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501167
Subject(s) - materials science , electroforming , optoelectronics , reliability (semiconductor) , interconnection , nand gate , resistive random access memory , flash (photography) , non volatile memory , capacitor , flash memory , voltage , power (physics) , electrical engineering , logic gate , nanotechnology , computer science , computer hardware , physics , optics , computer network , engineering , layer (electronics) , quantum mechanics
Pt/Ta 2 O 5 /HfO 2− x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel‐cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming‐free, self‐rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long‐term reliability, and only an electronic switching mechanism, without an ionic‐motion‐related mechanism.