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Growth and Etching of Monolayer Hexagonal Boron Nitride
Author(s) -
Wang Lifeng,
Wu Bin,
Jiang Lili,
Chen Jisi,
Li Yongtao,
Guo Wei,
Hu Pingan,
Liu Yunqi
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501166
Subject(s) - monolayer , materials science , hexagonal boron nitride , etching (microfabrication) , chemical vapor deposition , boron nitride , diffusion , wafer , nanotechnology , hexagonal crystal system , crystallography , nitride , deposition (geology) , chemical engineering , layer (electronics) , graphene , chemistry , physics , engineering , thermodynamics , paleontology , sediment , biology
The full spectrum from attachment‐kinetic‐dominated to diffusion‐controlled modes is revealed for the cases of monolayer h‐BN chemical vapor deposition (CVD) growth and Ar/H 2 etching. The sets of grown and etched structures exhibit well‐defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h‐BN flakes into continuous structures or film are first observed and explained.