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Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few‐Layer Molybdenum Diselenide by Raman Spectroscopy
Author(s) -
Lu Xin,
Utama M. Iqbal Bakti,
Lin Junhao,
Luo Xin,
Zhao Yanyuan,
Zhang Jun,
Pantelides Sokrates T.,
Zhou Wu,
Quek Su Ying,
Xiong Qihua
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201501086
Subject(s) - raman spectroscopy , stacking , materials science , diselenide , layer (electronics) , transmission electron microscopy , molybdenum , high resolution transmission electron microscopy , analytical chemistry (journal) , nanotechnology , optics , metallurgy , chemistry , organic chemistry , physics , selenium
Various combinations of interlayer shear modes emerge in few‐layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high‐resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking‐dependent properties in few‐layer 2D materials.