Field‐Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition | Zendy

Yang Zhibin | Zendy; Hao Jianhua | Zendy; Yuan Shuoguo | Zendy; Lin Shenghuang | Zendy; Yau Hei Man | Zendy; Dai Jiyan | Zendy; Lau Shu Ping | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Field‐Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Author(s) -

Yang Zhibin,

Hao Jianhua,

Yuan Shuoguo,

Lin Shenghuang,

Yau Hei Man,

Dai Jiyan,

Lau Shu Ping

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201500990

Subject(s) - materials science , black phosphorus , amorphous solid , pulsed laser deposition , deposition (geology) , nanoscopic scale , optoelectronics , band gap , phosphorus , field effect transistor , thin film transistor , electron mobility , laser , nanotechnology , transistor , thin film , optics , layer (electronics) , metallurgy , electrical engineering , crystallography , paleontology , chemistry , engineering , voltage , sediment , biology , physics

Amorphous black phosphorus (a‐BP) ultrathin films are deposited by pulsed laser deposition. a‐BP field‐effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research