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Field‐Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition
Author(s) -
Yang Zhibin,
Hao Jianhua,
Yuan Shuoguo,
Lin Shenghuang,
Yau Hei Man,
Dai Jiyan,
Lau Shu Ping
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201500990
Subject(s) - materials science , black phosphorus , amorphous solid , pulsed laser deposition , deposition (geology) , nanoscopic scale , optoelectronics , band gap , phosphorus , field effect transistor , thin film transistor , electron mobility , laser , nanotechnology , transistor , thin film , optics , layer (electronics) , metallurgy , electrical engineering , crystallography , paleontology , chemistry , engineering , voltage , sediment , biology , physics
Amorphous black phosphorus (a‐BP) ultrathin films are deposited by pulsed laser deposition. a‐BP field‐effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.