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High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
Author(s) -
Mudd Garry W.,
Svatek Simon A.,
Hague Lee,
Makarovsky Oleg,
Kudrynskyi Zakhar R.,
Mellor Christopher J.,
Beton Peter H.,
Eaves Laurence,
Novoselov Kostya S.,
Kovalyuk Zakhar D.,
Vdovin Evgeny E.,
Marsden Alex J.,
Wilson Neil R.,
Patanè Amalia
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201500889
Subject(s) - materials science , graphene , van der waals force , heterojunction , nanotechnology , optoelectronics , molecule , chemistry , organic chemistry
High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures is achieved by exploiting the broad‐band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near‐infrared to the visible spectrum.

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