Premium
Highly Transparent and Stretchable Field‐Effect Transistor Sensors Using Graphene–Nanowire Hybrid Nanostructures
Author(s) -
Kim Joohee,
Lee MiSun,
Jeon Sangbin,
Kim Minji,
Kim Sungwon,
Kim Kukjoo,
Bien Franklin,
Hong Sung You,
Park JangUng
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201500710
Subject(s) - materials science , nanowire , graphene , nanotechnology , stretchable electronics , transistor , electronics , field effect transistor , nanostructure , wearable technology , optoelectronics , electronic circuit , wearable computer , flexible electronics , electrical engineering , computer science , voltage , embedded system , engineering
Transparent and stretchable electronics with remarkable bendability, conformability, and lightness are the key attributes for sensing or wearable devices. Transparent and stretchable field‐effect transistor sensors using graphene–metal nanowire hybrid nanostructures have high mobility (≈3000 cm 2 V −1 s −1 ) with low contact resistance, and they are transferrable onto a variety of substrates. The integration of these sensors for RLC circuits enables wireless monitoring.