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Gallium Nitride Nanowires and Heterostructures: Toward Color‐Tunable and White‐Light Sources
Author(s) -
Kuykendall Tevye R.,
Schwartzberg Adam M.,
Aloni Shaul
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201500522
Subject(s) - materials science , nanowire , optoelectronics , gallium nitride , light emitting diode , heterojunction , indium gallium nitride , solid state lighting , diode , nanomaterials , phosphor , nitride , nanotechnology , photonics , light emission , layer (electronics)
Gallium‐nitride‐based light‐emitting diodes have enabled the commercialization of efficient solid‐state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire‐based heterostructures, have the potential to significantly improve the performance of light‐emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color‐tunable emission or white‐light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white‐light emission.