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Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect
Author(s) -
Shin Dong Hee,
Kim Sung,
Kim Jong Min,
Jang Chan Wook,
Kim Ju Hwan,
Lee Kyeong Won,
Kim Jungkil,
Oh Si Duck,
Lee Dae Hun,
Kang Soo Seok,
Kim Chang Oh,
Choi SukHo,
Kim Kyung Joong
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201500040
Subject(s) - materials science , quantum dot , graphene , heterojunction , optoelectronics , photodetector , diode , photosensitivity , doping , ultraviolet , superlattice , nanotechnology
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum‐confinement effect, is remarkably enhanced in the near‐ultraviolet range compared to commercially available bulk‐Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.