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Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires
Author(s) -
Li Xing,
Wei Xianlong,
Xu Tingting,
Pan Dong,
Zhao Jianhua,
Chen Qing
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201500037
Subject(s) - wurtzite crystal structure , piezoelectricity , piezoresistive effect , materials science , nanowire , stacking , nanotechnology , optoelectronics , zinc , composite material , physics , nuclear magnetic resonance , metallurgy
The piezoelectric and piezoresistive effects of InAs nanowires are experimentally demonstrated for the first time and are observed to strongly depend on the NW crystal structure. While single‐crystalline 〈0001〉 oriented wurtzite nanowires exhibit remarkable piezoelectric and piezoresistive effects, they are negligible in single‐crystalline wurtzite 〈 11 2 ¯ 0 〉 , zinc blende 〈011〉, 〈103〉, 〈 2 ¯ 1 ¯ 1 〉 oriented nanowires, and significantly suppressed by the presence of stacking faults.