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Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014)
Author(s) -
Guo Nan,
Hu Weida,
Liao Lei,
Yip SenPo,
Ho Johnny C.,
Miao Jinshui,
Zhang Zhi,
Zou Jin,
Jiang Tao,
Wu Shiwei,
Chen Xiaoshuang,
Lu Wei
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470329
Subject(s) - photodetection , nanowire , materials science , optoelectronics , photoconductivity , transistor , core (optical fiber) , electron transport chain , nanotechnology , photodetector , voltage , electrical engineering , composite material , botany , biology , engineering
On page 8203, W. D. Hu, L. Liao, W. Lu, and co‐workers develop a new way to realize the photogating effect on core/shell‐like InAs nanowire transistors for highly efficient photodetection. Under light illumination, electrons generated from the core are excited into the self‐assembled near‐surface photogating layer, forming a built‐in electric field to regulate the core conductance significantly. Anomalous high photoconductive gain and fast response time are obtained at room temperature.