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Perovskites: A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction (Adv. Mater. 48/2014)
Author(s) -
Ovsyannikov Sergey V.,
Karkin Alexander E.,
Morozova Natalia V.,
Shchennikov Vladimir V.,
Bykova Elena,
Abakumov Artem M.,
Tsirlin Alexander A.,
Glazyrin Konstantin V.,
Dubrovinsky Leonid
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470327
Subject(s) - materials science , semiconductor , band gap , perovskite (structure) , electrical conduction , optoelectronics , conduction band , oxide , thermal conduction , direct and indirect band gaps , nanotechnology , wide bandgap semiconductor , composite material , crystallography , electron , chemistry , physics , quantum mechanics , metallurgy
Perovskite‐type Mn 2 O 3 described by S. V. Ovsyannikov and co‐workers on page 8185, is a unique, hard semiconductor having a narrow and direct bandgap of 0.45 eV and switchable p‐n electrical conduction. Pv‐Mn 2 O 3 , comprising nontoxic and inexpensive elements, is much stronger than traditional semiconductors, and promises applications in the semiconductor industry, e.g., in IR detectors and other devices.