Premium
Solar Cells: High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells by Applying a Double In 2 S 3 /CdS Emitter (Adv. Mater. 44/2014)
Author(s) -
Kim Jeehwan,
Hiroi Homare,
Todorov Teodor K.,
Gunawan Oki,
Kuwahara Masaru,
Gokmen Tayfun,
Nair Dhruv,
Hopstaken Marinus,
Shin Byungha,
Lee Yun Seog,
Wang Wei,
Sugimoto Hiroki,
Mitzi David B.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470303
Subject(s) - open circuit voltage , materials science , common emitter , doping , short circuit , solar cell , optoelectronics , voltage , electrical engineering , engineering
On page 7427, J. Kim, H. Hiroi, T. K. Todorov, D. B. Mitzi, and co‐workers report high‐efficiency Cu 2 ZnSn(S,Se) 4 solar cells by applying In 2 S 3 /CdS double emitters. This new structure offers a high doping concentration within the Cu 2 ZnSn(S,Se) 4 solar cells, resulting in substantial enhancement in the open‐circuit voltage. The 12.4% device is obtained with a record open‐circuit voltage deficit of 593 mV.