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Transistors: Aerosol Jet Printed, Sub‐2 V Complementary Circuits Constructed from P ‐ and N ‐Type Electrolyte Gated Transistors (Adv. Mater. 41/2014)
Author(s) -
Hong Kihyon,
Kim Yong Hyun,
Kim Se Hyun,
Xie Wei,
Xu Weichao David,
Kim Chris H.,
Frisbie C. Daniel
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470285
Subject(s) - materials science , transistor , printed electronics , electronic circuit , optoelectronics , electrolyte , electronics , oscillation (cell signaling) , nanotechnology , voltage , electrode , electrical engineering , inkwell , composite material , physics , chemistry , quantum mechanics , engineering , biochemistry
Printed low‐voltage complementary inverters based on electrolyte gated transistors are demonstrated by C. D. Frisbie and co‐workers on page 7032. The printed complementary inverters exhibit a gain of 18 and a power dissipation below 10 nW. Five‐stage ring oscillators are achieved operating at 2 V with an oscillation frequency of 2.2 kHz. These printed circuits are promising for realizing low‐voltage, printed electronics.