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Organic Transistors: 25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors (Adv. Mater. 11/2014)
Author(s) -
Lee Wi Hyoung,
Choi Hyun Ho,
Kim Do Hwan,
Cho Kilwon
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470069
Subject(s) - materials science , instability , transistor , dielectric , semiconductor , trapping , field effect transistor , optoelectronics , organic semiconductor , nanotechnology , condensed matter physics , electrical engineering , voltage , mechanics , physics , ecology , biology , engineering
Recent studies of the bias‐stress‐driven electrical instability of organic field‐effect transistors are reviewed by K. Cho, D. H. Kim, and co‐workers on page 1660. The principles underlying the bias instability are discussed, particularly the mechanisms of charge trapping. The charge‐trapping phenomena in the semiconductor, the dielectric, and the semiconductor‐dielectric interface are analyzed with special attention to the microstructural dependence of bias instability.