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Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014)
Author(s) -
Wang Lifeng,
Wu Bin,
Chen Jisi,
Liu Hongtao,
Hu Pingan,
Liu Yunqi
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470062
Subject(s) - materials science , monolayer , chemical vapor deposition , graphene , field effect transistor , dielectric , nanotechnology , optoelectronics , hexagonal boron nitride , boron nitride , transistor , crystal (programming language) , physics , quantum mechanics , voltage , computer science , programming language
Y. Q. Liu, P. A. Hu and co‐workers reveal on page 1559 a strategy for enhancing the performance of graphenebased devices by using an hexagonal boron nitride (h‐BN) monolayer grown by chemical vapor deposition (CVD) as a dielectric layer. The strategy allows for effective size control of single‐crystal monolayer h‐BN domains, direct optical visualization of h‐BN domains, and a clean h‐BN surface. This study indicates that the interface between the graphene and h‐BN monolayer plays a critical role in determining the device performance.